SPRG Seminars - Archive

October 29, 2007:

High Speed Semiconductor Detectors for Photons from the Infrared to Gamma Rays"

Lothar Strueder, Siegen

Silicon Drift Detector type detectors (SDDs, pnCCDs, CDDs and active pixel sensors (APS), DEPFETs) have been developed as high speed imaging spectrometers for energies from 1 eV up to several MeV in a single photon counting mode as well in an integration mode. They show high energy and high position resolution as well as high quantum efficiency, low noise at high speed and extremely good radiation hardness.

I will summarize the latest developments in:

  • large, fully depleted pn CCDs for optical light and X-rays up to 30 keV
  • large active pixel sensors with pixel sizes from 24 μm to 1 mm for optical light and X-rays up to 30 keV
  • Silicon Drift detectors coupled to scintillators for photons from 3 keV to 3 MeV
  • drift detectors for high speed imaging

    All of those detectors are actually being used or are in a qualification stage for their use as:

  • wave front sensors for adaptive optics systems
  • Anger cameras in medical applications.
  • The X-ray missions: XMM-Newton, eROSITA, Simbol-X and XEUS
  • The "solar system" missions SOHO Mars exloration rover, ROSETTA and BepiColombo
  • Industrial applications: two examples from 10.000 installations worldwide

    The focus of the talk will be the introduction into the basics of modern silicon detector physics and technology and the long way towards scientific and industrial applications.

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